Using topological insulator proximity to generate perfectly conducting channels in materials without topological protection
نویسندگان
چکیده
منابع مشابه
1 / f noise in conducting channels of topological insulator materials
1 Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521, USA 2 Department of Electrical, Computer and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA 3 Ioffe Institute, Russian A...
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ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2014
ISSN: 1367-2630
DOI: 10.1088/1367-2630/16/11/113058